类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tray |
零件状态: | Active |
晶体管型: | HEMT |
频率: | 0Hz ~ 6GHz |
获得: | 16dB |
电压测试: | 50 V |
额定电流(安培): | 4.2A |
噪声系数: | - |
电流测试: | 150 mA |
功率输出: | 30W |
额定电压: | 125 V |
包/箱: | 440166 |
供应商设备包: | 440166 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRF8P29300HR6NXP Semiconductors |
FET RF 2CH 65V 2.9GHZ NI1230 |
|
AFV10700GSR5NXP Semiconductors |
1030MHZ 750W NI780GS-4L |
|
MCH6619-TL-ERochester Electronics |
PCH+PCH 4V DRIVE SERIES |
|
BLC8G27LS-60AVZAmpleon |
TRANS RF 60W LDMOS DFM6F |
|
BLF6G38-10G,118Ampleon |
RF FET LDMOS 65V 14DB SOT975C |
|
BLA9H0912LS-250UAmpleon |
BLA9H0912LS-250/SOT502/TRAY |
|
BLP05H6700XRGYAmpleon |
RF MOSFET LDMOS 50V 4-HSOP |
|
BLL8H0514LS-130UAmpleon |
RF FET LDMOS 100V 17DB SOT1135B |
|
MRF6V2300NR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
BLA6G1011L-200RG,1Ampleon |
RF FET LDMOS 65V 20DB SOT502D |
|
BLA9H0912L-250UAmpleon |
BLA9H0912L-250/SOT502/TRAY |
|
PD20010TR-ESTMicroelectronics |
TRANS N-CH 40V POWERSO-10RF FORM |
|
AFT05MS004NT1NXP Semiconductors |
FET RF 30V 520MHZ PLD |