类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
晶体管型: | LDMOS |
频率: | 1.2GHz ~ 1.4GHz |
获得: | 17dB |
电压测试: | 50 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 50 mA |
功率输出: | 130W |
额定电压: | 100 V |
包/箱: | SOT-1135B |
供应商设备包: | CDFM2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRF6V2300NR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
BLA6G1011L-200RG,1Ampleon |
RF FET LDMOS 65V 20DB SOT502D |
|
BLA9H0912L-250UAmpleon |
BLA9H0912L-250/SOT502/TRAY |
|
PD20010TR-ESTMicroelectronics |
TRANS N-CH 40V POWERSO-10RF FORM |
|
AFT05MS004NT1NXP Semiconductors |
FET RF 30V 520MHZ PLD |
|
MRF6S21100NR1NXP Semiconductors |
FET RF 68V 2.16GHZ TO270-4 |
|
MRF5S9101NR1NXP Semiconductors |
FET RF 68V 960MHZ TO-270-4 |
|
BF999E6433HTMA1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, SI |
|
BLF642,112Ampleon |
RF MOSFET LDMOS 32V SOT467C |
|
BLF882SUAmpleon |
RF FET LDMOS 104V 20.6DB SOT502B |
|
A2I25D025NR1NXP Semiconductors |
IC TRANS RF LDMOS |
|
MRFE6S9060GNR1NXP Semiconductors |
FET RF N-CH 1000MHZ TO270-2GN |
|
VRF3933Microsemi |
MOSF RF N CH 250V 20A M177 |