类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tray |
零件状态: | Active |
晶体管型: | HEMT |
频率: | 7.9GHz ~ 9.6GHz |
获得: | 17dB |
电压测试: | 40 V |
额定电流(安培): | 13A |
噪声系数: | - |
电流测试: | 500 mA |
功率输出: | 32W |
额定电压: | 100 V |
包/箱: | 440210 |
供应商设备包: | 440210 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRF6P21190HR5NXP Semiconductors |
RF MOSFET LDMOS 28V NI-1230 |
|
BLF2425M8L140JAmpleon |
RF FET LDMOS 65V 19DB SOT502A |
|
PD54008S-ESTMicroelectronics |
FET RF 25V 500MHZ PWRSO-10 |
|
CLF1G0035-100PUAmpleon |
RF MOSFET HEMT 50V LDMOST |
|
BLF888EUAmpleon |
RF FET LDMOS 104V 17DB SOT539A |
|
CLF1G0035S-200PUAmpleon |
RF FET 50V 11DB SOT1228B |
|
150-102N02A-00Wickmann / Littelfuse |
RF MOSFET N-CHANNEL DE150 |
|
CG2H80060D-GP4Wolfspeed - a Cree company |
RF DISCRETE |
|
LET20030CSTMicroelectronics |
FET RF 80V 2GHZ M243 |
|
MRFE6VP6600NR3NXP Semiconductors |
RF MOSFET LDMOS DL 50V OM780-4 |
|
MRF6V2300NR5Rochester Electronics |
RF POWER FIELD-EFFECT TRANSISTOR |
|
MRF8S21100HR5Rochester Electronics |
RF POWER N-CHANNEL, MOSFET |
|
BLA9H0912LS-700UAmpleon |
BLA9H0912LS-700/SOT502/TRAY |