类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
晶体管型: | LDMOS (Dual), Common Source |
频率: | 1.2GHz ~ 1.4GHz |
获得: | 17dB |
电压测试: | 50 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 150 mA |
功率输出: | 500W |
额定电压: | 100 V |
包/箱: | SOT539A |
供应商设备包: | SOT539A |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CPH6320-TL-ERochester Electronics |
PCH 1.8V DRIVE SERIES |
|
MMRF1009HSR5NXP Semiconductors |
FET RF 110V 1.03GHZ NI-780S |
|
BLF6G20LS-110,112Ampleon |
RF FET LDMOS 65V 19DB SOT502B |
|
BLC8G27LS-210PVZAmpleon |
RF FET LDMOS 65V 17DB SOT12513 |
|
BLC8G27LS-210PVYAmpleon |
RF FET LDMOS 65V 17DB SOT12513 |
|
BLL1214-250Rochester Electronics |
RF PFET, 1-ELEMENT, L BAND, SILI |
|
BF511,215NXP Semiconductors |
JFET N-CH 20V 30MA SOT23 |
|
MRF176GUMetelics (MACOM Technology Solutions) |
FET RF 2CH 125V 225MHZ 375-04 |
|
CG2H80120D-GP4Wolfspeed - a Cree company |
120W GAN HEMT 28V 8.0GHZ DIE, G2 |
|
MRF7P20040HSR3NXP Semiconductors |
FET RF 2CH 65V 2.03GHZ NI780HS-4 |
|
IRF225Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
CLF1G0035-100PRochester Electronics |
RF SMALL SIGNAL FIELD-EFFECT TRA |
|
BLA1011S-200R,112Rochester Electronics |
RF TRANSISTOR |