类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
晶体管型: | LDMOS (Dual) |
频率: | 1.03GHz ~ 1.09GHz |
获得: | 19.2dB |
电压测试: | 50 V |
额定电流(安培): | 10µA |
噪声系数: | - |
电流测试: | 100 mA |
功率输出: | 770W |
额定电压: | 105 V |
包/箱: | NI-780S-4L |
供应商设备包: | NI-780S-4L |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRF6S19060NR1NXP Semiconductors |
FET RF 68V 1.93GHZ TO270-4 |
|
IRFAF20Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
BLU6H0410L-600P,11Ampleon |
RF FET LDMOS 110V 21DB SOT539A |
|
BF1009SRE6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLF888DUAmpleon |
RF FET LDMOS 104V 21DB SOT539A |
|
SAV-581+ |
SMT LOW NOISE AMPLIFIER, 45 - 60 |
|
MRF6S19120HR5Rochester Electronics |
FET RF 68V 1.99GHZ NI-780 |
|
MRFE6S9201HSR5Rochester Electronics |
FET RF 66V 880MHZ NI-780S |
|
BLA9G1011LS-300GUAmpleon |
RF MOSFET LDMOS 32V SOT502E |
|
A2T26H300-24SR6NXP Semiconductors |
IC TRANS RF LDMOS |
|
3SK263-5-TG-ERochester Electronics |
SMALL SIGNAL FET |
|
IRFAE20Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
LET9120STMicroelectronics |
MOSFET N-CH 80V 18A M-246 |