类型 | 描述 |
---|---|
系列: | - |
包裹: | Strip |
零件状态: | Active |
晶体管型: | pHEMT FET |
频率: | 12GHz |
获得: | 12.2dB |
电压测试: | 2 V |
额定电流(安培): | 15mA |
噪声系数: | 0.62dB |
电流测试: | 10 mA |
功率输出: | 125mW |
额定电压: | 4 V |
包/箱: | 4-SMD, Flat Leads |
供应商设备包: | 4-Super Mini Mold |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMBFJ310LT3GSanyo Semiconductor/ON Semiconductor |
RF MOSFET N-CH JFET 10V SOT23 |
|
BLC9G20LS-120VYAmpleon |
RF FET LDMOS 65V 19.2DB SOT12753 |
|
BF513,215Rochester Electronics |
BF513 - RF SMALL SIGNAL FIELD-EF |
|
AFT21S232SR5NXP Semiconductors |
FET RF 65V 2.11GHZ NI780S-2 |
|
UPA574T-T1-ARochester Electronics |
SMALL SIGNAL FET |
|
BLL1214-35Rochester Electronics |
RF PFET, 1-ELEMENT, L BAND, SILI |
|
AFT27S006NT1NXP Semiconductors |
RF MOSFET LDMOS 28V PLD1.5W |
|
BLF8G19LS-170BVUAmpleon |
RF FET LDMOS 65V 18DB SOT1120B |
|
MRF8P20140WGHSR3NXP Semiconductors |
FET RF 2CH 65V 1.91GHZ NI780S |
|
PD85006TR-ESTMicroelectronics |
FET RF 40V 870MHZ POWERSO-10RF |
|
BLM9D2327-26BZAmpleon |
BLM9D2327-26B/SOT1462/REELDP |
|
AFT23H200-4S2LR6NXP Semiconductors |
FET RF 2CH 65V 2.3GHZ NI1230-4 |
|
BLF8G22LS-270UAmpleon |
RF FET LDMOS 65V 17.7DB SOT502B |