类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
晶体管型: | LDMOS (Dual), Common Source |
频率: | 860MHz |
获得: | 21dB |
电压测试: | 50 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 650 mA |
功率输出: | 150W |
额定电压: | 104 V |
包/箱: | SOT-1121B |
供应商设备包: | LDMOST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMRF1013HSR5NXP Semiconductors |
FET RF 2CH 65V 2.9GHZ |
|
CGH09120FWolfspeed - a Cree company |
RF MOSFET HEMT 28V 440095 |
|
BG3130H6327XTSA1Rochester Electronics |
DUAL N-CHANNEL MOSFET TETRODE |
|
MRFG35010AR5Rochester Electronics |
RF POWER N-CHANNEL, MOSFET |
|
MRF6V2300NBR5Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
IXZ2210N50L2Wickmann / Littelfuse |
RF MOSFET 2 N-CHANNEL DE275 |
|
BLC10G18XS-552AVTZAmpleon |
BLC10G18XS-552AVT/SOT1258/TRAYDP |
|
BLA9H0912L-700UAmpleon |
BLA9H0912L-700/SOT502/TRAY |
|
MRFX1K80NR5NXP Semiconductors |
RF MOSFET LDMOS 65V OM1230-4L |
|
CGHV60170D-GP4Wolfspeed - a Cree company |
RF MOSFET HEMT 50V DIE |
|
AFT09S282NR3NXP Semiconductors |
FET RF 70V 960MHZ OM-780-2 |
|
BLP10H603ZAmpleon |
RF FET LDMOS 104V 22DB 12VDFN |
|
CPH5819-TL-ERochester Electronics |
NCH+SBD 4V DRIVE SERIES |