类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tray |
零件状态: | Active |
晶体管型: | HEMT |
频率: | 3GHz |
获得: | 14.5dB |
电压测试: | 28 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 150 mA |
功率输出: | 30W |
额定电压: | 84 V |
包/箱: | 440166 |
供应商设备包: | 440166 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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