类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tray |
零件状态: | Active |
晶体管型: | HEMT |
频率: | 1.4GHz |
获得: | 14.5dB |
电压测试: | 50 V |
额定电流(安培): | 24A |
噪声系数: | - |
电流测试: | 800 mA |
功率输出: | 900W |
额定电压: | 125 V |
包/箱: | 440117 |
供应商设备包: | 440117 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRFE6VP6300HSR3Rochester Electronics |
RF 2-ELEMENT, ULTRA HIGH FREQUE |
|
MRFX600HR5NXP Semiconductors |
TRANS LDMOS 600W 400 MHZ 65V |
|
CE3514M4-C2CEL (California Eastern Laboratories) |
RF MOSFET PHEMT FET 2V |
|
BLF7G20LS-90P,118Ampleon |
RF FET LDMOS 65V 19.5DB SOT1121B |
|
BLC2425M8LS300PYAmpleon |
RF FET LDMOS 65V 17DB SOT12501 |
|
MWT-173Microwave Technology |
FET RF 5V 12GHZ PKG 73 |
|
BF1102,115Rochester Electronics |
FET RF 7V 800MHZ 6TSSOP |
|
MRF6V3090NR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
BLF6G27LS-40P,118Ampleon |
RF FET LDMOS 65V 17DB SOT1121B |
|
2N5246Rochester Electronics |
SMALL SIGNAL FET |
|
NE3515S02-T1C-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLP10H610AZAmpleon |
RF FET LDMOS 104V 22DB 12VDFN |
|
BLM8AD22S-60ABGYAmpleon |
BLM8AD22S-60ABG/OMP780/REELDP |