类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 47 V |
宽容: | ±4.89% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 25 Ohms |
电流 - 反向泄漏@ vr: | 2 µA @ 35.8 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | SOD-57, Axial |
供应商设备包: | SOD-57 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1PMT5944BE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 62V 3W DO216AA |
|
BZX84B39-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 300MW SOT23-3 |
|
SMBJ5341BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 5W SMBJ |
|
PDZ4.7BGW,115Rochester Electronics |
ZENER DIODE |
|
1N4765ARoving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
BZD27C47PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 47V 1W SUB SMA |
|
1PMT5921BT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.8V 3.2W POWERMITE |
|
BZX84B6V2-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 300MW SOT23-3 |
|
1PMT5950BE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 110V 3W DO216AA |
|
ZGL41-180A-E3/97Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 1W GL41 |
|
PDZ24B,115Nexperia |
DIODE ZENER 24V 400MW SOD323 |
|
BZG04-36-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 1.25W DO214AC |
|
1N5922BP-TPMicro Commercial Components (MCC) |
DIODE ZENER 7.5V 1.5W DO-41 |