类型 | 描述 |
---|---|
系列: | eGaN® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 80V |
电流 - 连续漏极 (id) @ 25°c: | 9.5A, 38A |
rds on (max) @ id, vgs: | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
vgs(th) (最大值) @ id: | 2.5V @ 2.5mA, 2.5V @ 10mA |
栅极电荷 (qg) (max) @ vgs: | 2.5nC @ 5V, 10nC @ 5V |
输入电容 (ciss) (max) @ vds: | 300pF @ 40V, 1100pF @ 40V |
功率 - 最大值: | - |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FW216A-TL-2WXRochester Electronics |
N CHANNEL POWER MOSFET |
|
DMP56D0UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 50V 0.16A SOT563 |
|
SI4505DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V/8V 8-SOIC |
|
AOC2804BAlpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CHANNEL 4DFN |
|
CSD88584Q5DCTTexas Instruments |
MOSFET 2N-CH 40V 22-VSON-CLIP |
|
DMPH6050SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CHANNEL 5.2A 8SO |
|
IPG20N06S415ATMA2IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
MSCSM120TAM31CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
IRF7304TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
|
ALD1107SBLAdvanced Linear Devices, Inc. |
MOSFET 4P-CH 10.6V 14SOIC |
|
SI7232DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 25A PPAK 1212-8 |
|
NVMFD5C674NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 42A S08FL |
|
HUF7554S3SRochester Electronics |
HUF755453S - 75A, 80V, 0.010 OHM |