类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Common Drain |
场效应管特征: | Standard |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
rds on (max) @ id, vgs: | 20mOhm @ 7A, 4.5V |
vgs(th) (最大值) @ id: | 1.25V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 660pF @ 10V |
功率 - 最大值: | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN53D0LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.36A SOT363 |
|
SH8K22TB1ROHM Semiconductor |
MOSFET 2N-CH 45V 4.5A SOP8 |
|
SP000629364Rochester Electronics |
IPP60R950C6 - 600V N-CHANNEL |
|
MTM684110LBFPanasonic |
MOSFET 2P-CH 12V 4.8A WMINI8-F1 |
|
MSCSM120AM02CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
DMP2200UDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 0.9A SOT363 |
|
SLA5085Sanken Electric Co., Ltd. |
MOSFET 5N-CH 60V 10A 12-SIP |
|
US6M11TRROHM Semiconductor |
MOSFET N/P-CH 20V/12V TUMT6 |
|
RFD3055SM9AS2479Rochester Electronics |
12A, 60V, 0.15OHM, N-CHANNEL, |
|
TSM8588CS RLGTSC (Taiwan Semiconductor) |
COMPLEMENTARY N & P-CHANNEL POWE |
|
QS6J1TRROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6 |
|
BSM180D12P3C007ROHM Semiconductor |
SIC POWER MODULE |
|
NVB5404NT4GRochester Electronics |
24A, 40V, 0.0045OHM, N-CHANNEL, |