English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 100V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A |
| rds on (max) @ id, vgs: | 6.3mOhm @ 20A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 5.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 7nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 800pF @ 50V |
| 功率 - 最大值: | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTJD4152PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 0.88A SOT-363 |
|
FDS4501HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/20V 8SOIC |
|
CMLDM7002AJ TR PBFREECentral Semiconductor |
MOSFET 2N-CH 60V 0.28A SOT563 |
|
NVMFD6H840NLWFT1GSanyo Semiconductor/ON Semiconductor |
T8 80V LL SO8FL DS |
|
FDG6306PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK7K6R8-40E,115Nexperia |
MOSFET 2N-CH 40V 40A LFPAK56D |
|
ECH8655R-R-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 9A ECH8 |
|
SSM6N40TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
|
VEC2315-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 60V 2.5A VEC8 |
|
SP8J5TBROHM Semiconductor |
MOSFET 2P-CH 30V 7A 8-SOIC |
|
NVMD6N03R2GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RF1S30P05Rochester Electronics |
30A, 50V, 0.065OHM, P-CHANNEL, |
|
AO8820Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7A 8-TSSOP |
