English
简体中文
MOSFET 4N-CH 10.6V 0.08A 16DIP
IDC CBL - HHSC64H/AE64G/HHSC64H
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | EPAD®, Zero Threshold™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel, Matched Pair |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 10.6V |
| 电流 - 连续漏极 (id) @ 25°c: | 80mA |
| rds on (max) @ id, vgs: | 25Ohm |
| vgs(th) (最大值) @ id: | 10mV @ 10µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 15pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 16-DIP (0.300", 7.62mm) |
| 供应商设备包: | 16-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9K134-100EXNexperia |
MOSFET 2N-CH 100V 8.5A LFPAK56D |
|
SI4804CDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SOIC |
|
STL20DN10F7STMicroelectronics |
MOSFET 2N-CH 100V 20A PWRFLAT56 |
|
DMN4031SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 40V 5.2A 8SO |
|
SQJQ904E-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |
|
FDMQ8403Sanyo Semiconductor/ON Semiconductor |
MOSFET 4N-CH 100V 3.1A 12MLP |
|
DMN2024UDH-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN3030-8 |
|
FDS6890ASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC |
|
ALD1101BSALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
AO7800Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V SC70-6 |
|
DMC4040SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 6.8A 8SO |
|
PMCXB1000UEZNexperia |
MOSFET N/P-CH 30V DFN1010B-6 |
|
RF1S23N06LERochester Electronics |
23A, 60V, 0.065OHM, N-CHANNEL, |