类型 | 描述 |
---|---|
系列: | EPAD® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 4 N-Channel, Matched Pair |
场效应管特征: | Depletion Mode |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | 12mA, 3mA |
rds on (max) @ id, vgs: | 500Ohm @ 3.6V |
vgs(th) (最大值) @ id: | 380mV @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
功率 - 最大值: | 500mW |
工作温度: | 0°C ~ 70°C (TJ) |
安装类型: | Through Hole |
包/箱: | 16-DIP (0.300", 7.62mm) |
供应商设备包: | 16-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS9926ASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 6.5A 8SOIC |
|
SH8JC5TB1ROHM Semiconductor |
-60V DUAL PCH+PCH, SOP8, POWER M |
|
SIZ980DT-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V 8-POWERPAIR |
|
NVMFD5853NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 12A 8DFN |
|
DMN2016LHAB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 7.5A 6UDFN |
|
SIZ340DT-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 30A PWRPAIR3X3 |
|
FX30KMJ-3#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
FDG8842CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/25V SC70-6 |
|
ZXMHC10A07T8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 100V 1A/0.8A SM8 |
|
AOE6930Alpha and Omega Semiconductor, Inc. |
MOSFET 2 N-CH 30V 22A/85A 8DFN |
|
SQJ264EP-T1_GE3Vishay / Siliconix |
AUTOMOTIVE DUAL N-CHANNEL 60 V ( |
|
UPA503T-T2-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SI1902CDL-T1-BE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.1A SC-70-6 |