类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Single Phase |
技术: | Standard |
电压 - 反向峰值(最大值): | 400 V |
电流 - 平均整流 (io): | 20 A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 10 A |
电流 - 反向泄漏@ vr: | 5 µA @ 400 V |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | 4-SIP, RBU |
供应商设备包: | RBU |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
D2SB80 D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 2A GBL |
|
GBU6BGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 100V 6A GBU |
|
GBU401-GComchip Technology |
BRIDGE RECT 1PHASE 100V 4A GBU |
|
TS20P06G D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 800V 20A TS-6P |
|
MSB407SRectron USA |
BRIDGE RECT GLASS 1000V 4A MSBS |
|
KBU6DGeneSiC Semiconductor |
BRIDGE RECT 1PHASE 200V 6A KBU |
|
VS-130MT140KPBFVishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.4KV 130A MT-K |
|
MD200S16M5-BPMicro Commercial Components (MCC) |
BRIDGE RECT 3PHASE 1.6KV 200A |
|
ABS6-GComchip Technology |
BRIDGE RECT 1PHASE 600V 1A ABS |
|
GSIB660N-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 600V 6A GSIB-5S |
|
GBL005GeneSiC Semiconductor |
BRIDGE RECT 1PHASE 50V 4A GBL |
|
MB1FTRSMC Diode Solutions |
BRIDGE RECT 1P 100V 500MA MBF |
|
GBU8D-TDiotec Semiconductor |
1PH BRIDGE GBU 200V 8A |