类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | - |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
6116LA20TPGRochester Electronics |
IC SRAM 16KBIT PARALLEL 24DIP |
|
CY7C1480BV33-200AXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
MTFC64GAPALBH-AITMicron Technology |
IC FLASH 512GBIT MMC 153TFBGA |
|
CY14ME064J2-SXQCypress Semiconductor |
IC NVSRAM 64KBIT I2C 8SOIC |
|
70T3519S200BCGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
SST26VF040A-80E/MFRoving Networks / Microchip Technology |
IC FLSH 4MBIT SPI/QUAD I/O 8WDFN |
|
AT28HC256E-90LM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
|
IS43R86400E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C1365CV33-133AXCRochester Electronics |
CACHE SRAM, 256KX32, 6.5NS PQFP1 |
|
70V9269S12PRFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
24AA256T/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIJ |
|
S29GL064S80TFIV20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
S29GL064N11FFIS13Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |