English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43DR16320D-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
GS4576C18GM-18IGSI Technology |
IC DRAM 576MBIT HSTL 144FBGA |
|
S29GL512S11DHAV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
CY7C09289V-9AXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
7007L20JGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
MT46H128M16LFDD-48 IT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
CY7C1062GE30-10BGXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
71P72804S250BQGRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
34VL02/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS61QDP2B42M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
S25FL064P0XMFI000Flip Electronics |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
CY7C1318AV18-167BZCRochester Electronics |
DDR SRAM, 1MX18, 0.5NS |
|
93AA46AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ SOT23-6 |
