类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43R16800E-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
NV25080DTHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
CY2149-45PCRochester Electronics |
STANDARD SRAM, 1KX4, 45NS |
|
IS34ML01G081-BLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
70V658S12BFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
71V2556S133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43LR32640A-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 90WBGA |
|
AT25128B-SSHL-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIC |
|
S29CD032J0PFFI010Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80FBGA |
|
25LC080C-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 5MHZ 8SOIC |
|
70T3339S133BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
FM24W256-GRochester Electronics |
SERIAL FRAM MEMORY, 32KX8 PDSO8 |
|
S29AL008J55TFIR10Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP I |