类型 | 描述 |
---|---|
系列: | Benand™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71024S15TYGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT57W512H36JF-4Rochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
24LC64XT-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
71V67803S166BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
STK11C88-NF25IFlip Electronics |
IC NVSRAM 256KBIT PAR 28SOIC |
|
70V3389S6BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
BR24G64NUX-3TTRROHM Semiconductor |
IC EEPROM 64KBIT VSON008X2030 |
|
IS43TR82560CL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
CY7C1329S-133AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
MWS5101ADL3Rochester Electronics |
256X4-BIT STANDARD SRAM, |
|
71V416L10BEGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C141-25JCRochester Electronics |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
7008L15PFGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |