English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61VF204836B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
CY7C1312CV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
GD25Q64CSJGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
M24512-RDW6TPSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
25LC080BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
IS66WVH8M8ALL-166B1LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 24TFBGA |
|
7027L15PFGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M29F800FB5AN6E2Alliance Memory, Inc. |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1512KV18-250BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
MT53D512M16D1DS-046 AAT:DMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
IS62WV12816BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
MT53D512M32D2DS-046 IT:DMicron Technology |
IC DRAM 16GBIT 2.133GHZ 200WFBGA |
|
AT34C02C-TH-TRochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
