English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | XTRA III |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 128Gb (16G x 8) |
| 内存接口: | eMMC |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LBGA |
| 供应商设备包: | 100-FBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FS256SDSMFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AT45DB161E-MHD-YAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8UDFN |
|
W631GU6MB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
S25FS128SDSBHV203Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
FM24C04B-GRochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
AT45DB041E-SSHNHT-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
AS4C4M32S-6BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1514V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS46R16320D-5TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
GE28F320B3BC90Rochester Electronics |
IC FLASH 32MBIT PARALLEL 48VFBGA |
|
CY621472G30-45ZSXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY27C010-200JCRochester Electronics |
OTP ROM, 128KX8, 200NS PQCC32 |
|
DS2506S+Maxim Integrated |
IC EPROM 64KBIT 1-WIRE 8SO |
