English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Benand™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (SLC) |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 67-VFBGA |
| 供应商设备包: | 67-VFBGA (6.5x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1049GN30-10ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
71V65903S80BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C195-12VCRochester Electronics |
STANDARD SRAM, 64KX4, 12NS |
|
71V2556S166PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C4M16SA-7BCNAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
UPD44325362BF5-E50-FQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
IS46DR16320E-25DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
71V3558S200PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
24AA16-I/MCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DFN |
|
70T633S10BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
24AA024T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
CY7C1021BNL-15ZSXATRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C1347G-133AXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
