English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Quad Port, Synchronous |
| 内存大小: | 288Mb (16M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 450 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 100°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FPBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FT24C04A-USG-BFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8SOP |
|
04184QLAD-5Rochester Electronics |
4MBIT (256K X 18) SRAM |
|
IS43TR16128BL-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
DS1230AB-120IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
71V424L15YG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
24AA01T-I/LTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SC70-5 |
|
71V65603S150BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
MT58L64L18DT-7.5Rochester Electronics |
CACHE SRAM 64KX18 4.2NS PQFP100 |
|
SST25PF040CT-40V/NPRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8USON |
|
IS25LQ010B-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT SPI/QUAD 8SOIC |
|
GS82583EQ18GK-500IGSI Technology |
IC SRAM 288MBIT PARALLEL 260BGA |
|
S29GL01GT10TFA013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
FM24C03UVM8Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
