English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 400 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61DDPB451236A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
S29GL512S10DHA020Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
CY7C1339S-133AXCRochester Electronics |
IC SRAM 4MBIT 133MHZ 100LQFP |
|
AT24CM01-SHD-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY14B101KA-ZS45XITCypress Semiconductor |
IC NVSRAM 1MBIT PAR 44TSOP II |
|
MAX721ESERochester Electronics |
FLASH MEMORY POWER-SUPPLY REG |
|
24LC00T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DFN |
|
71V65703S80BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS61NLF25636B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
IS43QR16256B-083RBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96BGA |
|
CY62146ESL-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
HM4-6516B/883Rochester Electronics |
2K X 8 CMOS RAM |
|
AT24C02D-STUM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ SOT23-5 |
