English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX25xxx05/06 |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 75 MHz |
| 写周期时间 - 字，页: | 50µs, 1ms |
| 访问时间: | - |
| 电压 - 电源: | 2.35V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1324S-133AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
CG5125AFRochester Electronics |
SPECIAL |
|
AS4C256M16D3LC-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
CY62128DV30LL-55SXITRochester Electronics |
STANDARD SRAM, 128KX8 |
|
S29GL064S70DHI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
71T75602S166BGIRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
BR25L040FV-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8SSOPB |
|
71V65703S85BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
71V65903S85PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY14B104LA-ZS20XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
FM93CS56M8XRochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
S29AL016J70BFI023Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
70V9089L12PFGIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
