类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM - FP |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 25 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 50-TSOP (0.400", 10.16mm Width), 44 Leads |
供应商设备包: | 50/44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128SDSMFN000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
S26KS512SDGBHI030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CY62136FV30LL-45ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
7052L20PFGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 120TQFP |
|
BR25320N-10SU-2.7ROHM Semiconductor |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
CY62147CV33LL-70BVIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
24LC21A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S25FL512SDSBHI213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
24C00T-E/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 100KHZ 8TSSOP |
|
CY7C1512V18-167BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
SST26VF080AT-80E/SNRoving Networks / Microchip Technology |
IC FLSH 8MBIT SPI/QUAD I/O 8SOIC |
|
TC58BYG2S0HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 67VFBGA |
|
IS42S32200L-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |