类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25U12835FZNI-08GMacronix |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
24501BVARochester Electronics |
STANDARD SRAM, 4KX1, 120NS |
|
AS8C803625A-QC75NAlliance Memory, Inc. |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C141-55NCRochester Electronics |
DUAL-PORT SRAM, 1KX8 |
|
24C04/PRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
S29GL512S10DHSS63Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MR0A16AVMA35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
MX25L4006EZNI-12GMacronix |
IC FLASH 4MBIT SPI 86MHZ 8WSON |
|
EM68B16CWQK-25HEtron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
IS61QDPB22M36A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
25LC160C-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
R1LV0408DSP-7LR#S0Rochester Electronics |
STANDARD SRAM, 512KX8 |
|
MT58L128L32P1T-7.5CTRRochester Electronics |
4MB 256KX18 128KX32/36 SRAM |