类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 55 ns |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL512P10FFIR20Flip Electronics |
IC FLASH 512MBIT PARALLEL 64BGA |
|
FM25VN10-GCypress Semiconductor |
IC FRAM 1MBIT SPI 40MHZ 8SOIC |
|
IS43DR16320D-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
GS82582Q36GE-333IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
IS42S32400F-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
MX29GL640ELXFI-70GMacronix |
IC FLASH 64MBIT PARALLEL 64LFBGA |
|
AM27S25A/B3ARochester Electronics |
AM27S25 - OTP ROM, 512X8, 25NS |
|
23A512T-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
MT49H8M36SJ-25:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
93AA76T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
GS8640Z18GT-250IGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
S29GL256S10DHIV20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
71321LA55TFG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |