English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (SLC) |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (8x6.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM18W08-SGTRRochester Electronics |
IC FRAM 256KBIT PARALLEL 28SOIC |
|
24AA025UID-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C12451KV18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
93C46A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CY62158DV30LL-55BVIRochester Electronics |
STANDARD SRAM, 1MX8, 55NS |
|
AS7C1026B-15TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
25LC160D-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
CY7C1329-100AIRochester Electronics |
CACHE SRAM, 64KX32, 5NS |
|
S29GL01GS10FHSS10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
AS7C34096A-12JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
M95128-WMN6TPSTMicroelectronics |
IC EEPROM 128KBIT SPI 20MHZ 8SO |
|
IS43R86400E-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
BR24G16NUX-3ATTRROHM Semiconductor |
IC EEPROM 16KBIT VSON008X2030 |
