类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 350 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-WBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C34098A-12JINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
24LC21-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
IS61NLP25636B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
AT24CS32-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
AT25SF161-SHDHR-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8SOIC |
|
CY7C1061GE18-15BV1XICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
47L64T-I/SNRoving Networks / Microchip Technology |
IC EERAM 64KBIT I2C 1MHZ 8SOIC |
|
M24512-DRDW3TP/KSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
S29GL512S10DHSS20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
AS4C64M4SA-6TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
24LC02BHT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
FM24C04ULNRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
CAT24C64YI-GRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |