类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V424L15YGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
25LC080A-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
S-25C020A0I-K8T3UABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 5MHZ 8TMSOP |
|
THGAF8G9T43BAIRToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 64GBIT UFS 153VFBGA |
|
71V424YS15PHGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT29F128G08CBECBH6-12M:CMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
CY7C1514KV18-300BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V35761S200BQRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
23K256-E/SNRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8SOIC |
|
CY7C1521KV18-250BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS45S32400F-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT34C04-SS5M-BRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
24LC256-I/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIJ |