English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS6C1616-55BINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
CY62137VNLL-70ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
MT58L64L18FT-8.5TRRochester Electronics |
CACHE SRAM, 64KX18, 8.5NS |
|
93LC46C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8MSOP |
|
S-25C040A0I-T8T1UABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 5MHZ 8TSSOP |
|
IS42S86400F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
W25Q80JVSSIQWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8SOIC |
|
24AA64FT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TDFN |
|
S29GL064N90FFIS10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
24FC04H-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
IS62WV25616EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY14B104M-ZSP25XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 54TSOP II |
|
71V424S15YG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
