类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q80JVSSIQWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8SOIC |
|
24AA64FT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TDFN |
|
S29GL064N90FFIS10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
24FC04H-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
IS62WV25616EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY14B104M-ZSP25XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 54TSOP II |
|
71V424S15YG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
BR24G32FV-3GTE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
R1WV6416RSA-7SI#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 70NS |
|
GS8256418GD-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
AS7C34098B-10TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TSOP I |
|
93C46CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOP |
|
MT46V32M16CY-5B IT:JMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |