类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX66L51235FZ2I-10GMacronix |
IC FLSH 512MBIT SPI 104MHZ 8WSON |
|
CY7C1360S-166BZCRochester Electronics |
IC SRAM 9MBIT PARALLEL 165FBGA |
|
FM25C020UNRochester Electronics |
EEPROM, 256X8, SERIAL PDIP8 |
|
IS43R16320F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
24AA02-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS43R16160F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
71024S12YGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AS4C64M8D3L-12BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
CY7C106B-20VCTRochester Electronics |
STANDARD SRAM, 256KX4, 20NS |
|
BR24G08FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
NV24C64DWVLT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64K I2C 1MHZ 8SOIC |
|
CY14MB064Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
71V3556SA100BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |