English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MXSMIO™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 16Mb (2M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 80 MHz |
| 写周期时间 - 字，页: | 100µs, 4ms |
| 访问时间: | - |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1423KV18-333BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1325A-117ACRochester Electronics |
STANDARD SRAM, 256KX18 |
|
NM93C66ANRochester Electronics |
EEPROM, 256X16, SERIAL PDIP8 |
|
S29GL064S80TFB043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
STK17T88-RF25Rochester Electronics |
IC NVSRAM 256KBIT PAR 48SSOP |
|
11AA160T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8MSOP |
|
CY7C1049G30-10ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43R16320D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
BR24G16NUX-3TTRROHM Semiconductor |
IC EEPROM 16KBIT VSON008X2030 |
|
AT25XE011-MAHN-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8UDFN |
|
AS4C128M8D2A-25BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
IS61NLP102418B-250B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
TC58BVG0S3HTA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 48TSOP I |
