类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.1V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93AA66AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
CY7C1514KV18-300BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1525V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AM27S181/BKARochester Electronics |
AM27S181 - OTP ROM, 1KX8, 80NS |
|
CY7C1471BV25-133AXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
IS61WV1288EEBLL-10HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
AS7C31025B-15JCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS43TR16640C-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
S29GL128S11FHBV23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
93C66AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
|
TH58NYG2S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 63BGA |
|
CAT93C46RVI-GRochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8SOIC |
|
SST39WF1601-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |