类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL128S11FHBV23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
93C66AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
|
TH58NYG2S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 63BGA |
|
CAT93C46RVI-GRochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8SOIC |
|
SST39WF1601-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
S25FL256SAGBHMC03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
W971GG6SB-18 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
S29GL512S11GHI023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
7130LA25TFGIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
71V3579S80PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
FEMC008GTTE7-T14-17Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
FM93C56TLM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
CY27H256-25ZCRochester Electronics |
OTP ROM, 32KX8, 25NS PDSO28 |