English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (SLC) |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V016SA15BFRochester Electronics |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
IS43DR16320C-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CY7C1513KV18-250BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71024S15TYRochester Electronics |
SRAM 1 MEG (64K X 16-BIT) |
|
CY7C199-35SIRochester Electronics |
STANDARD SRAM, 32KX8, 35NS |
|
CY7C1339F-166ACRochester Electronics |
CACHE SRAM, 128KX32, 3.5NS |
|
AF016GEC5X-2001IXATP Electronics, Inc. |
IC 16GBIT 153BGA |
|
AS1C1M16P-70BINAlliance Memory, Inc. |
IC PSRAM 16MBIT PARALLEL 48FBGA |
|
CY7C15632KV18-450BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
MT28FW01GABA1HJS-0AAT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
M45PE80-VMP6GAlliance Memory, Inc. |
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN |
|
MT41K256M8DA-107 AAT:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
NV34C04MU3VTGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
