类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C4096A-15JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AS7C256A-12TCNAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
24LC256-E/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
24AA64-E/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
IS25LQ040B-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI/QUAD 8SOIC |
|
7164S35DBRochester Electronics |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
71V3559S85BGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V65903S80BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
11AA02E64T-I/TTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE SOT23 |
|
24LC025-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
W632GG6NB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
93AA46B-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
25LC128-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIC |