English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.4V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT24C512HU5EGT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
24FC04HT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ SOT23-5 |
|
25LC128XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
24LC64-E/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
XC68HC908GP20CFBRochester Electronics |
TSG 8BIT20K FLASH |
|
NM25C040LVM8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
IS49RL18320-125BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
AT25XE512C-MAHN-TAdesto Technologies |
IC FLASH 512KBIT SPI 8UDFN |
|
IS64WV102416BLL-10MLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
S29GL01GS11DHSS20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
AS7C38098A-10BINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
7134LA25JGI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS43LR16200D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 60TFBGA |
