English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.71V ~ 1.89V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-LFBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT25QL128ABA8ESF-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
93C46A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
S25FS512SAGNFM010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
S29GL128S90DHSS30Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT45DB041E-SSHNHA-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
CY7C0852V-167BBCRochester Electronics |
DUAL-PORT SRAM, 128KX36, 4NS, CM |
|
AM27S281A/BLARochester Electronics |
AM27S281 - OTP ROM, 1KX8, 50NS |
|
MT53E256M32D2DS-053 AAT:BMicron Technology |
IC DRAM 8GBIT 1.866GHZ 200WFBGA |
|
IS49RL36160-125BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
IS43TR16128D-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
93C46AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
SST39VF3201-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
70V658S15BCRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
