类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24C64-DFDW6TPSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
CY62148G30-45SXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32SOIC |
|
CY7C1062GE30-10BGXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
71V432S7PFGRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
93AA66A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
CY7C1019DV33-10ZSXITFlip Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
70V7519S166BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
71V65703S85BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
HM1-6514-8Rochester Electronics |
1024 X 4 CMOS SRAM |
|
UPD44647366AF5-E22-FQ1-ARochester Electronics |
IC SRAM 72MBIT PARALLEL 165PBGA |
|
71V3558S133PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71V3557S80PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
6116LA90TDBRochester Electronics |
IC SRAM 16KBIT PARALLEL 24CDIP |