类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 100µs, 4ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46R86400D-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
UPD44165182BF5-E40-EQ3Rochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
CY7C2565XV18-633BZXCRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
IS34ML02G084-TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
DS1220AD-200Rochester Electronics |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
S70GL02GS12FHIV20Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
71V2556S150PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS1249Y-100#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
71V424L10YGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
NM24C04UFVNRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
MR0A16AYS35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 44TSOP2 |
|
IS43R86400E-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MT29F1T08CMHBBJ4-3R:BMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |