类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 4Gb (128M x 32) |
内存接口: | - |
时钟频率: | 1.866 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29RZ4B4DZZMGWD-18I.80C TRMicron Technology |
IC FLASH RAM 4G PAR 162VFBGA |
|
CY7C1470V33-200BZICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
GVT71128D32T-7Rochester Electronics |
IC SRAM 4MBIT 66MHZ |
|
CY7C1520AV18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
FM24C08UVM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
CY7C1315KV18-250BZITCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT25040S-TE13Rochester Electronics |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
S25FL512SAGMFVG10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
W25Q256JVFIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S-24C128CI-T8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 128KBIT I2C 8TSSOP |
|
CY7C199CN-12VCRochester Electronics |
STANDARD SRAM, 32KX8, 12NS |
|
71256SA20TPGIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28DIP |
|
S29AL008J70TFA023Rochester Electronics |
IC FLASH 8MBIT PARALLEL 48TSOP |