类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1512KV18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
93C56B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MSOP |
|
70V3379S6BFRenesas Electronics America |
IC SRAM 576KBIT PAR 208CABGA |
|
AT24C16D-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
|
CAT28LV64NI-25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
CAT25C08V-TE13Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
CY62137CV30LL-55BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
71V416S12BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
IS61VPS204836B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
SST39SF010A-70-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
S25FL256LAGMFM003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S29GL512S11TFIV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
6116LA25SOGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |