English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX29LV |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V65703S80BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
71256L35YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
24FC02T-E/MUYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8UDFN |
|
AT28C010E-12FM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PAR 32FLATPACK |
|
MT58L64L32PT-6TRRochester Electronics |
SRAM SYNC QUAD 2M-BIT 64KX32 |
|
CAS24S128C4ATRRochester Electronics |
EEPROM, SERIAL 128 KB I2C, WITH |
|
TC58BVG0S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 67VFBGA |
|
93LC56B-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
S29GL512T12TFN023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IS46TR16128C-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
S29GL064S70BHI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
AS7C31026C-12JINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
GS864018GT-250IGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
