English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, Standard |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 300 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 2.7V, 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (20x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1225AD-85Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
93LC56B-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
S29GL512S10FHSS53Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
S79FL256SDSMFBG03Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
S29GL256S90DHSS50Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
24LC014-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
S25FL128SDPBHB303Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
MT57W512H36JF-6Rochester Electronics |
DDR SRAM, 512KX36, 0.5NS PBGA165 |
|
S29GL01GT10FAI010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IS62WV5128EBLL-45HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
CY7C199CL-15VXCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT48LC8M16A2B4-6A:L TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
GS82564Z18GD-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
