English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, ZBT |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V, 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 100°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-FPBGA (22x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V016SA12PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
70T3589S166BCRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
BR24C01-WDS6TPROHM Semiconductor |
IC EEPROM 1KBIT I2C 8TSSOP |
|
71V65703S80PFRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
RM24C256C-LSNI-TAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8SOIC |
|
MX25L6433FZNI-08GMacronix |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
IS43DR86400C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
CY62157EV30LL-45BVICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
DS28E05P+TMaxim Integrated |
IC EEPROM 896B 1-WIRE 6TSOC |
|
MR2A16ACMA35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 48FBGA |
|
AT28C256-20UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
CY62256VNLL-70ZXCRochester Electronics |
STANDARD SRAM, 32KX8, 70NS PDSO2 |
|
CY7C1460SV25-167AXCRochester Electronics |
ZBT SRAM, 1MX36, 3.4NS PQFP100 |
