类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-VFBGA (8x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V3559S80BQIRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS61C6416AL-12KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
S25FL128SDPMFV003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
DS2502P-E64Rochester Electronics |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
25AA080T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8SOIC |
|
S25FL127SABBHVC00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
AS4C8M16D1-5BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
CY7C15632KV18-400BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V3556SA133BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS25WP064A-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S25HS512TFAMHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
S25FL256LDPBHV030Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
93LC46CXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |